Intermetallic layers in thin films for improved...

Details Intermetallic layers in thin films for improved... Intermetallic layers in thin films for improved...

H - Electricity

05

K

356/1

H05K 3/02 (2006.01) C23C 14/58 (2006.01) H01B 1/02 (2006.01) H01F 10/06 (2006.01) H01L 21/3205 (2006.01) H01L 23/532 (2006.01) C23C 14/00 (2006.01) C23C 14/16 (2006.01)

Patent

CA 1056511

INTERMETALLIC LAYERS IN THIN FILMS FOR IMPROVED ELECTROMIGRATION RESISTANCE Abstract A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200°C and 525°C for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6x10-4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.

263822

Affiliated with

Also associated with

Rating

Intermetallic layers in thin films for improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Intermetallic layers in thin films for improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Intermetallic layers in thin films for improved... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1120864