Interrupted liquid phase epitaxy process

Details Interrupted liquid phase epitaxy process Interrupted liquid phase epitaxy process

H - Electricity

01

L

148/2.55

H01L 21/208 (2006.01) C30B 19/08 (2006.01) C30B 19/12 (2006.01)

Patent

CA 1293179

Abstract An interrupted liquid phase epitaxy process for producing distributed feedback laser wafers involves epitaxial growth at a first temperature range followed by epitaxial growth at a second higher temperature range. A prior art liquid phase epitaxy process involves a low temperature soak at a temperature of approximately 615 degrees Centigrade followed by ramped cooling and epitaxial growth of a guiding layer, active layer and confining layer at a temperature of approximately 595 degrees Centigrade. The interrupted liquid phase epitaxy process involves epitaxial growth of a guiding layer in a manner similar to the prior art process, but growth of the guiding layer is followed by a high temperature soak at a temperature of approximately 645 degrees Centigrade. Ramped cooling follows, with epitaxial growth of the active layer and confining layer taking place at a temperature of approximately 628 degrees Centigrade. Epitaxial growth at the higher temperature reduces difficulties with spinodal decomposition and allows improved control over the amount of phosphorus used in the process.

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