Inverted diffusion stagnation point flow reactor for vapor...

Details Inverted diffusion stagnation point flow reactor for vapor... Inverted diffusion stagnation point flow reactor for vapor...

C - Chemistry, Metallurgy

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C

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C23C 16/18 (2006.01) C23C 16/30 (2006.01) C23C 16/455 (2006.01)

Patent

CA 2016970

INVERTED FIFFUSER STAGNATION POINT FLOW REACTOR FOR VAPOR DEPOSITION OF THIN FILMS ABSTRACT OF THE INVENTION This invention relates to a novel inverted diffusion stagnation point flow reactor which can be used for vapor deposition of thin metalorganic films on substrates. A metal- organic chemical vapor deposition reactor comprising a gas mixing chamber with gas entry ports into the mixing chamber; a substrate for deposition thereon of metalorganic film; and a gas outlet for conveying gas away from the substrate, characterized by a capillary plug positioned between the mixing chamber and the substrate, the capillary plug serving to streamline the flow of gas to the substrate.

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