Inverter stage in an integrated injection logic

Details Inverter stage in an integrated injection logic Inverter stage in an integrated injection logic

H - Electricity

01

L

356/30, 328/94

H01L 27/02 (2006.01) H01L 27/07 (2006.01)

Patent

CA 1051982

ABSTRACT OF THE DISCLOSURE This invention relates to an invertor with a lateral bipolar pnp (npn) transistor and a vertical, bipolar npn (pnp) transistor which vertical transistor has at least one collector. The collector of the lateral transis- tor is connected with the base of the vertical transistor. The emitter of the vertical transistor is connected to one terminal of a supply voltage source, and the emitter of the lateral transistor is connected to the other terminal of the supply voltage source. A resistance is connected between the base of the lateral transistor and the said one terminal of the supply voltage source. The inverter is formed in an integrated circuit which includes a semiconductor substrate in which both a pnp (npn) lateral transistor and an npn (pnp) vertical transistor are formed in an epitaxial layer which has been deposited on the substrate. A portion of the base of the lateral transistor forms the emitter of the vertical transistor. A portion of the collector of the lateral transistor forms the base of the vertical transistor. The emitter of the vertical transistor is located as a buried layer, while the collectors of the vertical transistor are located at the surface of the epitaxial layer.

256413

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