Ion beam implanter control system

Details Ion beam implanter control system Ion beam implanter control system

H - Electricity

01

J

356/176, 356/192

H01J 37/20 (2006.01) H01J 37/317 (2006.01) H01L 21/68 (2006.01)

Patent

CA 1251287

Ion Beam Implanter Control System Abstract A scanning ion beam implanter having a wafer support to control the angle of incidence between an ion beam and the wafer. The wafer support preferably bends the wafer into a segment of a cylinder. As the ion beam scans across the curved wafer surface the angle of incidence remains relatively uniform. The support also includes structure for pivoting the bent wafer about a pivot axis. The pivoting of the wafer is syn- chronized with the scanning of the ion beam to compensate for scanning of the ion beam in a direction transverse to the direction compensated for by the cylindrical curvature of the wafer.

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