G - Physics – 01 – R
Patent
G - Physics
01
R
356/117, 324/23
G01R 27/02 (2006.01) G01N 27/30 (2006.01) G01N 27/414 (2006.01) G01R 19/08 (2006.01) G01R 27/22 (2006.01) G01R 31/26 (2006.01)
Patent
CA 1088216
ION-CONTROLLED DIODE Abstract of the Disclosure Disclosed is an ion-controlled diode for providing an electrical indication of a specific ion concentration in a fluid. An ion-sensitive membrane is placed over the junction of a gate controlled diode whose impedance is being measured. An external reference electrode is biased such that an inversion layer forms in the semiconductor material near the ion-sensitive membrane. Changes in the concentration of the unknown ion in fluid passing over the ion-sensitive membrane will affect the inversion layer in the gate controlled diode. The change in inversion layer will result in measurable changes in the diodes impedence. - 1 -
299763
Macrae & Co.
The Trustees Of The University Of Pennsylvania
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