H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/265 (2006.01) H01J 3/00 (2006.01) H01J 3/04 (2006.01) H01J 27/14 (2006.01) H01J 37/08 (2006.01)
Patent
CA 2162748
An ion source (12) embodying the present invention is for use in an ion implanter (10). The ion source comprises a gas confinement chamber (76) having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening (78) to allow ions to exit the chamber. A base (120) positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A gas supply is in communication with the gas confinement chamber for conducing an ionizable gas into the gas confinement chamber. A cathode (124) is supported by the base and positioned with respect to said gas confinement chamber to emit ionizaing electrons into the gas ionization zone. The cathode comprises a tubular conductive body (160, 162) that partially extends into the gas confinement chamber and includes a conductive cap (164) that faces into the gas confinement chamber for emitting ionizaing electrons into the gas confinement chamber. A filament (178) is supported by the base (120) at a position inside the tubular conductive body of the cathode for heating the cap and cause the ionizing electrons to be emitted from the cap into the gas confinement chamber.
Cloutier Richard M.
Horsky Thomas N.
Mcintyre Edward K. Jr.
Reynolds William E.
Sferlazzo Piero
Axcelis Technologies Inc.
Borden Ladner Gervais Llp
Corporation Eaton
LandOfFree
Ion generating source for use in an ion implanter does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ion generating source for use in an ion implanter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion generating source for use in an ion implanter will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1870450