Ion implantation and annealing of compound semiconductor layers

Details Ion implantation and annealing of compound semiconductor layers Ion implantation and annealing of compound semiconductor layers

H - Electricity

01

L

356/142, 356/197

H01L 21/265 (2006.01) C30B 31/22 (2006.01) H01L 21/20 (2006.01) H01L 21/74 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1332697

Ion Implantation and Annealing of Compound Semiconductor Layers Abstract of the Disclosure A method for reducing the defect and disloca- tion density in III-V material layers deposited on dissimilar substrates is disclosed. The method involves ion implantation of dopant materials to create amorphous regions within the layers followed by an annealing step during which the amorphous regions are recrystallized to form substantially monocrystalline regions. The wafers produced by the process are particularly well suited for opto- electronic devices.

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