Ion implantation method

Details Ion implantation method Ion implantation method

H - Electricity

01

L

356/176

H01L 21/265 (2006.01) H01L 21/266 (2006.01) H01L 21/8238 (2006.01)

Patent

CA 1108311

ABSTRACT OF THE DISCLOSURE Ions are implanted into a body, such as semi- conductor substrate material, through one or more covering layers formed over the body. A thin conductive film is in contact with the covering layer prior to the ion implanta- tion. The ions are implanted into the material through the thin conductive film. The conductive film functions to conduct away any charge which tends to accumulate in the covering layer. The conductive film thereby prevents a charge accumulation which would tend to discharge through and cause damage to the covering layer. The method is particularly useful for fabricating MOS and CMOS semiconductor devices.

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