Ion-implantation process for forming ic wafer with...

Details Ion-implantation process for forming ic wafer with... Ion-implantation process for forming ic wafer with...

H - Electricity

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H01L 21/70 (2006.01) H01L 21/265 (2006.01) H01L 27/00 (2006.01) H01L 29/866 (2006.01)

Patent

CA 1223086

ABSTRACT OF THE DISCLOSURE A new process making it possible to produce stable buried Zener diodes in large-sized wafers where slow ramping of diffusion temperatures is required to avoid crystal damage and other adverse effects. The process includes an initial deep ion implantation of p type dopant (boron). A second ion implantation of n type dopant (arsenic) is made over the p type implantation. Both implantations are driven in to the required degree. An additional p type dopant diffusion is made coincident with the base formation by ion implantation to establish connection to the original deep p-doped region, and an additional n type dopant diffusion is made coincident with the emitter formation to establish connection with the n type dopant implantation.

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