Ion-implanted bubble memory

Details Ion-implanted bubble memory Ion-implanted bubble memory

G - Physics

11

C

352/37.2

G11C 11/14 (2006.01) G11C 19/08 (2006.01)

Patent

CA 1149949

BONYHARD, P. I. 28-12 - 13 - ION-IMPLANTED BUBBLE MEMORY Abstract of the Disclosure A magnetic bubble memory or the major-minor loop configuration is implemented by ion-implantation techniques. The major loop comprises two paths disposed adjacent to corresponding ends of the various minor loops, and a transfer control electrical conductor disposed at such ends. Current pulses through the conductor moves bubbles from the ends of the minor loops to one of the two paths of the major loop, and thereafter directly across the major loop to the other path.

365549

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