Ion implanted reverse-conducting thyristor

Details Ion implanted reverse-conducting thyristor Ion implanted reverse-conducting thyristor

H - Electricity

01

L

356/163, 356/38

H01L 21/38 (2006.01) H01L 21/265 (2006.01) H01L 29/08 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1144285

8 48,144 ABSTRACT OF THE DISCLOSURE A method for making a pnpn semiconductor reverse conducting thyristor comprises the steps of forming n-type semiconductor layers on both sides of a p-type semiconduc- tor substrate for forming an n-type emitter layer and an n-type anode-base layer. A p-type semiconductor impurity region is formed in the n-type anode-base layer for form- ing a p-type anode layer. A p+-type semiconductor layer is ion implanted in the p-type substrate adjacent to the n-type cathode emitter layer by irradiating it with boron atoms.

366042

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