Ion implanting apparatus and ion implanting method

Details Ion implanting apparatus and ion implanting method Ion implanting apparatus and ion implanting method

H - Electricity

01

L

H01L 21/265 (2006.01) H01J 37/02 (2006.01) H01J 37/317 (2006.01)

Patent

CA 2129403

An ion implanting apparatus for irradiating a material, for example, a semiconductor wafer, with an ion beam generated at an ion source, for implanting the ion into the material, is provided with a magnet at a side of the material opposite to a side into which the ion is irradiated. Thereby, the implantation is performed without charging thereon and with a high yielding ratio.

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