Ion selective field effect transistor sensor

Details Ion selective field effect transistor sensor Ion selective field effect transistor sensor

H - Electricity

01

L

356/197, 324/23

H01L 29/66 (2006.01) G01N 27/414 (2006.01) H01L 21/18 (2006.01) H01L 21/58 (2006.01) H01L 23/12 (2006.01)

Patent

CA 1251514

Abstract of the Disclosure In a semiconductor sensor, the surfaces of first and second semiconductor substrates of a first conductivity type are planished and bonded together. Source and drain regions are formed by diffusing an impurity of second conductivity type. The source and drain regions are separated by an opening in the second substrate along a surface of which they are extended. An insulative layer is formed on the opposite surface of the second substrate and an inner surface of the opening.

501835

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