Ion-sensitive electrode and processes for making the same

Details Ion-sensitive electrode and processes for making the same Ion-sensitive electrode and processes for making the same

G - Physics

01

N

324/28.1

G01N 27/36 (2006.01) G01N 27/28 (2006.01) G01N 27/333 (2006.01)

Patent

CA 1110702

Abstract of the Disclosure An improved ion-sensitive electrode is described, particularly in terms of the structure of a pH electrode and first and second processes for making the same. The pH electrode includes a substrate, preferably of forsterite, which is configured as a wafer having a substantially planar wafer surface. A continuous conducting layer, formed by either thin-film vapor deposition of thick-film screening processes, is formed on the substantially planar wafer surface in a desired configuration. A first region of the continuous conducting layer, and contiguous portions of the substantially planar wafer surface, are covered by a continuous membrane layer preferably composed of a pH- sensitive glass such as Corning Code 0150 glass. Typically, the membrane layer is formed by a thick-film process which involves the reduction of the glass to a fine powder, the mixing of the powder with an organic vehicle including an organic solvent and an organic blender to form a glass paste, and the application of the glass paste to the wafer through a wire mesh screen having an open region therethrough corresponding in configuration to that of the desired membrane layer. The paste when applied to the wafer is fused into a continuous membrane layer by the application of heat, at a first temperature to drive off the organic solvent and a second temperature or temperatures to drive off the organic binder and to fuse the glass. An insulated output leads is connected directly to a second region of the conducting layer. Alternatively, an active device chip, such as that including a field effect transistor, is bonded to the wafer and interconnected with the second region of the conducting layer and with the output lead or leads. The exposed conducting elements of the electrode, including the second region of the conducting layer, the active device chip, and all exposed portions of the leads, are covered by a fluid-tight seal. Other ion-sensitive electrodes and variations of the aforementioned processes are described.

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