Irradiation for rapid turn-off reverse blocking diode thyristor

Details Irradiation for rapid turn-off reverse blocking diode thyristor Irradiation for rapid turn-off reverse blocking diode thyristor

H - Electricity

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H01L 21/26 (2006.01) H01L 21/263 (2006.01) H01L 29/74 (2006.01) H01L 29/87 (2006.01)

Patent

CA 1085964

IRRADIATION FOR RAPID TURN-OFF REVERSE BLOCKING DIODE THYRISTOR ABSTRACT OF THE DISCLOSURE The turn-off time of a reverse blocking diode thyristor is decreased without significantly effecting other electrical characteristics by irradiating with a radiation source to a dosage corresponding to between about 4 x 1013 and about 2 x 1014 electrons/cm2 and preferably to between about 6 x 1013 and about 2 x 1014 electrons/cm2 with 2 MeV electron radiation source. Preferably the radiation source is electron radiation with an energy greater than 1 MeV. -1-

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