G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.1
G11C 11/34 (2006.01) G11C 11/35 (2006.01) G11C 17/16 (2006.01) H01L 21/02 (2006.01) H01L 21/3215 (2006.01) H01L 23/525 (2006.01) H01L 27/24 (2006.01) H01L 45/00 (2006.01)
Patent
CA 1082809
Specification Title of the Invention Irreversible Semiconductor Switching Element and Semiconductor Memory Device Utilizing the Same Abstract of the Disclosure The switching element comprised a high resistivity polycrystalline silicon resistor whose resistance irreversi- bly decreases to a small value at a threshold voltage when the voltage across the resistor reaches the threshold voltage. A semiconductor memory devise is constituted by using the switching element as a memory cell, and a semiconductor gate element for controlling the current flowing through the semiconductor switching element. The switching element has simple construction and can operate with low voltage and low current. It is not necessary to blow fuse or destroy diode as in the prior art semiconductor switching element.
266907
Ieda Nobuaki
Murota Junichi
Tanimoto Masafumi
Watanabe Takashi
Macrae & Co.
Nippon Telegraph And Telephone Public Corporation
LandOfFree
Irreversible semiconductor switching element and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Irreversible semiconductor switching element and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Irreversible semiconductor switching element and... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-682058