Isfet sensor and method of manufacture

Details Isfet sensor and method of manufacture Isfet sensor and method of manufacture

H - Electricity

01

L

356/149, 324/28.

H01L 29/76 (2006.01) H01L 21/768 (2006.01) H01L 23/48 (2006.01) H01L 29/417 (2006.01)

Patent

CA 1210067

ABSTRACT There is provided an ISFET structure and a method for manufacturing that structure such that external electrical contact to the P+ source and drain regions is made through individual holes etched from the back to the source and drain. regions with sidewall isolation being provided in the holes and metallization covering the surface of said sidewalls and extending to contact pads on the back of the ISFET.

469454

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