Isoelectronic co-doping

Details Isoelectronic co-doping Isoelectronic co-doping

H - Electricity

01

L

H01L 31/0304 (2006.01) H01L 29/167 (2006.01) H01L 29/207 (2006.01) H01L 29/227 (2006.01) H01L 31/068 (2006.01) H01L 31/18 (2006.01) H01S 5/18 (2006.01) H01S 5/32 (2006.01) H01S 5/34 (2006.01) H01S 5/30 (2006.01) H01S 5/323 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2437124

Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermophotovoltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

L'invention concerne le co-dopage isoélectronique de composés et d'alliages semi-conducteurs dotés d'accepteurs et de donneurs profonds, utilisé pour réduire une largeur de bande interdite, pour augmenter la concentration des constituants dopants dans les alliages résultant, et pour augmenter les durées de vie des mobilités de porteuse. Des composés et des alliages du groupe III-V, tels que GaAs et GaP, sont isoélectroniquement co-dopés avec, par exemple, N et Bi, afin de conférer des propriétés particulières à des piles solaires, des piles thermophotovoltaïques, des diodes électroluminescentes, des photodétecteurs, et des lasers sur des substrats GaP, InP, GaAs, Ge, et Si. L'invention concerne également des composés et des alliages du groupe II-VI isoélectroniquement co-dopés.

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