Isolation structure using liquid phase oxide deposition

Details Isolation structure using liquid phase oxide deposition Isolation structure using liquid phase oxide deposition

H - Electricity

01

L

H01L 21/31 (2006.01) H01L 21/316 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2131668

A shallow trench isolation structure is formed by a process having a reduced number of steps and thermal budget by filling trenches by liquid phase deposition of an insulating semiconductor oxide and heat treating the deposit to form a layer of high quality thermal oxide at an interface between the deposited oxide and the body of semiconductor material (e.g. substrate) into which the trench extends. This process yields an isolation structure with reduced stress and reduced tendency to develop charge leakage. The structure can be readily and easily planarized, particularly if a polish-stop layer is applied over the body of semiconductor material and voids and contamination of the deposited oxide are substantially eliminated by self-aligned deposition above the trench in the volume of apertures on a resist used to form the trench.

Cette invention concerne une structure isolante mince en tranchée, formée selon un procédé comptant un nombre réduit d'étapes et un bilan thermique moindre. Ce procédé consiste à déposer dans les tranchées un oxyde semiconducteur isolant en phase liquide donnant une couche d'oxyde thermique de haute qualité à l'interface oxyde-corps de semiconducteur (substrat). Le procédé donne une structure isolante à contraintes réduites et ayant moins tendance à donner lieu à une fuite de charge. La structure peut être aisément planarisée, en particulier si une couche d'arrêt polie est appliquée sur le corps semiconducteur, et les lacunes et impuretés de l'oxyde déposé sont quasi complètement éliminées par dépôt auto-aligné au-dessus de la tranchée dans les ouvertures de la résine utilisée pour former ladite tranchée.

Affiliated with

Also associated with

Rating

Isolation structure using liquid phase oxide deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isolation structure using liquid phase oxide deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolation structure using liquid phase oxide deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1787498