Isothermal growth of bubble domain garnet films

C - Chemistry – Metallurgy – 30 – B

Patent

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148/2.55

C30B 9/00 (2006.01) C30B 19/02 (2006.01) C30B 19/06 (2006.01)

Patent

CA 1055818

ISOTHERMAL GROWTH OF BUBBLE DOMAIN GARNET FILMS Abstract of the Disclosure A technique for reproducibly and uniformly growing magnetic bubble domain garnet films under isothermal conditions. In one situation, a fluxed melt is prepared such that the primary phase (first phase to crystallize) is orthoferrite rather than garnet. At the growth tempera- ture and prior to substrate-melt contact, the melt is saturated with respect to orthoferrite and supersaturated with respect to garnet. Dur- ing growth, the orthoferrite crystals are separated from the supersaturated garnet solution so that a high quality garnet film is grown on the sub- strate. After growth, the melt is reheated to above its liquidus (crystal- lization) temperature to dissolve the orthoferrite crystals, thus pro- viding a nutrient source for garnet constituents which can be used dur- ing subsequent expitaxial depositions.

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