Isotropic etching of silicon strain gages

Details Isotropic etching of silicon strain gages Isotropic etching of silicon strain gages

H - Electricity

01

L

149/17, 349/63

H01L 21/308 (2006.01) G01L 1/22 (2006.01)

Patent

CA 1126631

- 13 - Case 4212 ISOTROPIC ETCHING OF SILICON STRAIN GAGES ABSTRACT OF THE DISCLOSURE A method of etching a silicon diffused resistance pressure transducer assembly (13) of a transducer (10) mounted on a glass base (14) providing a thin flexible area on the transducer in the region of the diffused resistors (15) and a thick rigid area in the region where the transducer is mounted to the glass base (14). To accomplish this, the transducer (10) is first bonded to the glass base (14) which is tubular, thus providing a circular area on the backside (16) of the transducer (10) open to ambient. This open area is then filled with an isotropic etchant which etches silicon material but which has little effect on glass material. Thus, the region of the diffused resistors (15) is etched out to provide a thin flexible area while leaving a thick area where the transducer (10) is mounted to the glass base (14).

353174

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