H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 39/22 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2073831
A Josephson junction device includes a substrate, an oxide thin film formed on a portion of the principal surface of the substrate, which is constituted of a single crystal of which lattices shift at angle of 45° to that of the principal surface of the substrate. One of the two portions of the oxide superconductor thin film is formed on the oxide thin film and the other portion of the superconductor thin film is formed on the principal surface of the substrate directly so that the lattices of the two portions of the oxide superconductor thin film are respectively linear up to those of the oxide thin film and the principal surface of the substrate and the grain boundary. The grain boundary which constitutes a weak link of the Josephson junction is formed just on the step portion formed of the oxide thin film.
Un dispositif de jonction de Josephson comprend un substrat, une couche mince d'oxyde formée sur une partie de la surface principale du substrat, qui est constitué d'un monocristal dont le réseau s'incline à angle de 45 degrés par rapport à l'angle de la surface principale du substrat. Une des deux parties de la couche mince d'oxyde supraconducteur est formée sur la couche mince d'oxyde et l'autre partie de la couche mince de supraconducteur est formée directement sur la surface principale du substrat de manière que les réseaux des deux parties de la couche mince d'oxyde supraconducteur soient respectivement linéaires jusqu'à ceux de la couche mince d'oxyde et la surface principale du substrat et le joint de grain. Le joint de grain qui constitue un maillon faible de la jonction de Josephson est formé juste à la partie intermédiaire formée de la couche mince d'oxyde.
Itozaki Hideo
Matsuura Takashi
Tanaka Saburo
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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