Junction field effect transistor

Details Junction field effect transistor Junction field effect transistor

H - Electricity

01

L

356/126, 356/149

H01L 29/80 (2006.01) H01L 29/10 (2006.01) H01L 29/808 (2006.01)

Patent

CA 1150854

ABSTRACT: An asymmetric junction field effect transistor particularly suitable for HF and VHF tuning units due to its small intermodulation. The small intermodulation is obtained by two measures. First, the field effect tran- sistor is provided with a high-ohmic substrate part ad- joining the channel region. This prevents diffusion from the substrate into the channel region so that a uni- form doping can be obtained. Second, the source zone is electrically conductively connected to the substrate.

352541

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