Junction field effect transistor random access memory

Details Junction field effect transistor random access memory Junction field effect transistor random access memory

G - Physics

11

C

352/82.3

G11C 11/08 (2006.01)

Patent

CA 1114503

ABSTRACT A random access memory (RAM) in which each memory cell includes a JFET having two gate electrodes selectable by means of a single word line and a single bit line. The JFETs have a common electrode formed from the substrate of a semiconductor body common to each of the memory cells, which serves as one of the main electrodes of each of the JFETs.

293775

Affiliated with

Also associated with

Rating

Junction field effect transistor random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Junction field effect transistor random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Junction field effect transistor random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-192624