Junction-mos power field effect transistor

Details Junction-mos power field effect transistor Junction-mos power field effect transistor

H - Electricity

01

L

356/149, 356/34

H01L 29/78 (2006.01) H01L 29/10 (2006.01) H01L 29/423 (2006.01) H01L 29/786 (2006.01) H01L 29/808 (2006.01)

Patent

CA 1219381

C-3545 A JUNCTION-MOS POWER FIELD EFFECT TRANSISTOR Abstract of the Disclosure: A thin film insulated gate field effect transistor having an opposite conductivity type island in its channel region. The island is electrically shorted to the transistor gate electrode.

454900

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