L fast-fabrication process for high speed bipolar analog...

Details L fast-fabrication process for high speed bipolar analog... L fast-fabrication process for high speed bipolar analog...

H - Electricity

01

L

356/130

H01L 21/331 (2006.01) H01L 21/761 (2006.01) H01L 21/8222 (2006.01)

Patent

CA 1235233

FABRICATION PROCESS FOR HIGH SPEED BIPOLAR ANALOG LARGE SCALE INTEGRATION CIRCUITS Abstract of the Disclosure A fabrication process for integrated circuits having linear bipolar transistors and other circuit elements. The process defines collector contact 32, base 34, and isolation 36 regions in one masking operation. Subsequent masking layers of photoresist 40, 42, 46 are used to shield selected regions during implantation of exposed regions. Circuit density is improved through the use of aluminum doped isolation regions 36. The base region is doped in a single ion implantation step, which is followed by low temperature deposition of a covering oxide layer 48.

496287

Affiliated with

Also associated with

Rating

L fast-fabrication process for high speed bipolar analog... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with L fast-fabrication process for high speed bipolar analog..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and L fast-fabrication process for high speed bipolar analog... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1169635