C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 33/00 (2006.01) H01L 21/48 (2006.01) H01L 23/373 (2006.01)
Patent
CA 2057490
A synthetic diamond wafer grown by deposition from a plasma has a smooth, substrate side face and a rough, deposition side face. The rough face is coated with a bonding agent which fills the valleys and is finished so that its surface is parallel to the substrate side face to permit photolithographic processing of the wafer. Also disclosed is a multi-wafer laminate of two or more diamond film layers bonded together with an interlayer. Smooth, flat outer faces of the layers are oriented mutually parallel. The inner, bonded faces may be rough. A filler of diamond particles in the bonding agent improves the thermal conductivity of the laminate.
Gowling Lafleur Henderson Llp
Norton Company
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