Large-area, high-voltage thyristor

Details Large-area, high-voltage thyristor Large-area, high-voltage thyristor

H - Electricity

01

L

356/161

H01L 29/74 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1111148

ABSTRACT OF THE DISCLOSURE In a high-voltage thyristor comprising a semi- conductor body having contiguous pnpn four layers, and opposed anode and cathode electrodes and a gate electrode provided for the semiconductor body, one of p-base and n- base regions having an impurity concentration higher than the other has an impurity concentration which is no more than 8 x 1015 atoms/cm3 in the vicinity of a junction between the one base region and an adjacent emitter region and which has a gradually decreasing gradient toward the other contiguous base region. The one base region has a sheet resistance of 500 to 1500 ohms/?. The realization of a high-voltage, large-diameter and large-current thyristor can be ensured.

312612

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