Large area, homogeneous array fabrication including...

G - Physics – 03 – F

Patent

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G03F 7/00 (2006.01)

Patent

CA 2750434

Improved patterning at small scale including nanoscale. A method comprising: providing at least one cantilever comprising at least one tip thereon, and a material deposited on the tip, contacting the cantilever with a substrate so that the material is deposited from the tip onto the substrate to form a material deposit, wherein the temperature of the substrate is adapted to control a size of the material deposit. A device comprising: at least one heat sink, at least one heating or cooling stage, at least one vacuum system, wherein the device is adapted to function with a substrate to be subjected to a material deposition and to keep the substrate temperature substantially constant during deposition.

L'invention concerne un traçage de motifs amélioré à petite échelle, y compris nanoscopique. Le procédé consiste : à réaliser au moins un bras comprenant au moins une pointe, et un matériau déposé sur la pointe, à mettre en contact le bras avec un substrat de sorte que le matériau est déposé de la pointe sur le substrat pour former un dépôt de matériau. La température du substrat est réglée pour contrôler la taille du dépôt de matériau. L'invention concerne aussi un dispositif comprenant : au moins un dissipateur thermique, au moins un étage de chauffage ou de refroidissement, au moins un système sous vide. Le dispositif est conçu pour fonctionner avec un substrat à soumettre à un dépôt de matériau et pour maintenir la température du substrat sensiblement constante pendant le dépôt.

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