Large area low mass ir pixel having tailored cross section

Details Large area low mass ir pixel having tailored cross section Large area low mass ir pixel having tailored cross section

H - Electricity

01

L

H01L 27/00 (2006.01) G01J 5/20 (2006.01) H01L 27/146 (2006.01) H01L 27/15 (2006.01) H01L 27/16 (2006.01) H05B 33/26 (2006.01)

Patent

CA 2368974

The present invention provides a much more optimum design for an infrared pixel microstructure. The configuration of the microstructure itself is designed to optimum operational characteristics including faster speeds than previously available. These faster speeds are achieved by reducing the thermal mass of the pixel itself, thus directly affecting the pixels associated thermal time constant. Thermal mass is reduced by tailoring the cross section of the pixel structure such that protective layers are substantially reduced in areas where they are not necessary. This results in the desired reduction and overall pixel mass and consequently more optimum pixel performance.

Cette invention a trait à une conception bien plus optimale d'une microstructure de pixel infrarouge. La configuration de la microstructure elle-même est conçue pour présenter des caractéristiques de fonctionnement optimales, y compris des vitesses plus rapides que celles existant précédemment. On obtient ces vitesses plus rapides en réduisant la masse thermique du pixel lui-même, ce qui influe directement sur la constante de temps thermique associée aux pixels. On réduit cette masse thermique en individualisant la coupe transversale de la structure du pixel de sorte que les couches protectrices soient sensiblement réduites dans les zones où elles ne sont pas indispensables. On parvient, de la sorte, à une réduction et à une masse d'ensemble de pixel désirées et, partant, à un fonctionnement plus optimal du pixel.

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