Large capacity major-minor loop bubble domain memory with...

Details Large capacity major-minor loop bubble domain memory with... Large capacity major-minor loop bubble domain memory with...

G - Physics

11

C

352/37.2

G11C 11/14 (2006.01) B29C 37/04 (2006.01) G11C 19/08 (2006.01)

Patent

CA 1098622

75E139 LARGE CAPACITY MAJOR-MINOR LOOP BUBBLE DOMAIN MEMORY WITH REDUNDANCY ABSTRACT A large capacity bubble memory device using a basic major-minor loop storage cell design. The basic storage cell is repeated, typically in matrix form, on a suitable bubble domain structure. The cell design is arranged so that interconnecting elements between respective cells permit magnetic bubble domains to be selectively transferred between cells in accordance with the status of switch elements. Control signals control the switch status. The cells include redundancy features so that cells can be interconnected to form a large capacity storage loop whereby chip yield is increased.

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