C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 33/00 (2006.01) C30B 1/00 (2006.01) C30B 25/02 (2006.01) C30B 29/04 (2006.01) C30B 29/36 (2006.01) H01L 29/16 (2006.01)
Patent
CA 2352985
The invention concerns a method which consists in forming a monocrystalline SiC substrate (2) ending in a carbon atomic plane according to a c(2x2) reconstruction and in at least annealing the substrate, for transforming said atomic plane, which is a plane of CC dimers (4) with sp configuration, into a plane of C-C dimers (8) with sp<3> configuration. The invention is applicable in microelectronics, optics, optoelectronics, micromechanics and to biological materials.
Selon l'invention, on forme un substrat monocristallin (2) en SiC terminé par un plan atomique de carbone selon une reconstruction c(2x2) et on effectue au moins un re-cuit du substrat, apte à transformer ce plan atomique, qui est un plan de dimères C=C (4) de configuration sp, en un plan de dimères C-C (8) de configuration sp3. Application à la microélectronique, l'optique, l'optoélectronique, la mi-cromécanique et aux biomatériaux.
Derycke Vincent
Dujardin Gerald
Mayne Andrew
Soukiassian Patrick
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