Laser annealing method and laser annealing device

Details Laser annealing method and laser annealing device Laser annealing method and laser annealing device

H - Electricity

01

L

H01L 21/20 (2006.01) H01L 21/268 (2006.01) H01L 21/336 (2006.01) H01L 29/786 (2006.01)

Patent

CA 2635774

Energy distribution in a short axis direction of a rectangular beam to be applied on an amorphous semiconductor film (amorphous silicon and the like) is made uniform. The energy distribution in the short axis direction of the rectangular beam can be made uniform by a cylindrical lens array (26) or a waveguide (36), and light focusing optical systems (28, 44) or by an optical system including a diffractive optical element. The range of effective energy applied on the amorphous semiconductor film is widened, and that makes it possible to increase the speed of transferring a substrate (3). Thus, performance of laser annealing process is improved.

La présente invention permet d'uniformiser la distribution d'énergie dans le sens du petit axe d'un faisceau rectangulaire à appliquer sur un film à semi-conducteur amorphe (silicium amorphe et similaire). La distribution d'énergie dans le sens du petit axe du faisceau rectangulaire peut être uniformisée par une matrice de lentilles cylindriques (26) ou un guide d'ondes (36), et des systèmes optiques de focalisation de lumière (28, 44) ou par un système optique incluant un élément optique diffractif. La gamme d'énergie effective appliquée sur le film à semi-conducteur amorphe est élargie, et cela rend possible l'augmentation de la vitesse de transfert d'un substrat (3). Les prestations d'un procédé de recuit au laser sont ainsi améliorées.

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