Laser deformation of semiconductor junctions

Details Laser deformation of semiconductor junctions Laser deformation of semiconductor junctions

H - Electricity

01

L

327/11, 356/176

H01L 21/428 (2006.01) H01L 21/263 (2006.01) H01L 21/268 (2006.01)

Patent

CA 1136774

ABSTRACT "Method of Making Semiconductor Devices" The present invention relates to a method of making a semiconductor device. The device has a junction between a more heavily doped semiconductor and a less heavily doped semiconductor. The method includes the step of deforming a portion of the junction by directing substantially perpendicular to the junction, a radiation beam selected from the group consisting of laser beam and electron beam. The radiation beam has a diameter less than 100 microns and is small compared to the area of the junction and is of sufficient intensity to melt the semi- conductor material until a portion of the more heavily doped region melts into the less heavily doped region.

342558

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