H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/40 (2006.01) H01S 5/02 (2006.01) H01S 3/0941 (2006.01) H01S 5/022 (2006.01) H01S 5/024 (2006.01)
Patent
CA 2284946
The present document describes a novel architecture for high-power stacked laser diode array assemblies. The architecture relies on a monolithic substrate made from an electrically insulating material having a high thermal conductance. A set of thin parallel ridges is machined on a major surface of the substrate. Each ridge comprises a flat side wall perpendicular to the major surface of the substrate. This side wall has a depth comparable to the cavity length of the laser diode bars and it is machined with high precision. The other side wall of each ridge is tilted with respect to the opposite side wall. Laser diode bars are loaded into the channels formed between successive ridges, and the laser bars are then held firmly in place by wedging low-cost metallic wires between the N electrode of the bars and the tilted side wall of the neighboring ridge. The laser diode bars are then soldered to the metallized flat side walls using soldering techniques well known in the art, thus forming a two-dimensional array of accurately-positioned laser diode bars. The better precision that can be achieved in the positioning and alignment of the laser diode bars promotes the use of economical arrays of microlenses mounted in a single, prefabricated lens holder, thus giving affordable high-power laser diode arrays with collimated outputs.
Bonnier Deni
Champagne Yves
Labranche Bruno
Parent Andre
Bonnier Deni
Champagne Yves
Institut National D'optique
Labranche Bruno
Parent Andre
LandOfFree
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