Laser diode with an ion-implanted region

Details Laser diode with an ion-implanted region Laser diode with an ion-implanted region

H - Electricity

01

S

H01S 5/20 (2006.01) H01L 21/265 (2006.01) H01S 5/00 (2006.01) H01S 5/30 (2006.01) H01S 5/02 (2006.01)

Patent

CA 2208370

A laser device and a method of fabrication are disclosed in which the device comprises one or more ion-implanted regions (37, 39) as a means to decrease the occurrence of device failures attributable to dark- line defects. The ion-implanted regions, which are formed between the laser gain cavity and the regions of probable dark-line defect origination, serve to modify the electrical, optical, and mechanical properties of the device lattice structure, thus reducing or eliminating the propagation of dark-line defects emanating from constituent defects or bulk material imperfections which may be present in the device.

L'invention concerne un dispositif laser et son procédé de fabrication. Ce dispositif comprend une ou plusieurs régions d'implantation d'ions (37, 39) comme moyen pour diminuer les risques de défaillances attribuables aux défauts du type raies sombres. Les régions d'implantation d'ions qui sont formées entre la cavité de gain du laser et les régions d'origine probable des défauts du type raies sombres servent à modifier les propriétés électriques, optiques et mécaniques de la structure de réseau du dispositif, et à diminuer ou éliminer la propagation de défauts du type raies sombres provoquées par des défauts de constitution ou des imperfections éventuellement présentes dans la masse du matériau du dispositif.

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