Laser diodes and method for making laser diodes

Details Laser diodes and method for making laser diodes Laser diodes and method for making laser diodes

H - Electricity

01

L

H01L 31/12 (2006.01) H01L 31/18 (2006.01) H01S 5/026 (2006.01) H01S 5/0683 (2006.01) H01S 3/025 (1990.01)

Patent

CA 2079593

2079593 9118421 PCTABS00008 A monolithically integrated structure comprises a laser diode (60), a photodetector diode (62) and a reference diode (64) which are monolithically integrated on a common substrate (10). The photodetector diode (62) is optically coupled to the laser diode (60). The reference diode (64) is substantially identical to the photodetector diode (62) and optically decoupled from the laser diode (60). When substantially equal reverse biases are applied to the photodetector diode (62) and the reference diode (64), the reference diode (64) conducts a leakage current which can be used to substantially cancel the leakage current of the photodetector diode (62). The monolithically integrated structure may also include a modulator diode (100) which is monolithically integrated on the common substrate (10) and optically coupled to the laser diode (60). The monolithically integrated structure is useful in optical communications systems.

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