Laser furnace and method for zone refining of semiconductor...

Details Laser furnace and method for zone refining of semiconductor... Laser furnace and method for zone refining of semiconductor...

B - Operations, Transporting

23

K

356/176, 356/192

B23K 26/00 (2006.01) C30B 13/24 (2006.01) C30B 13/28 (2006.01) H01L 21/00 (2006.01)

Patent

CA 1265207

ABSTRACT OF THE DISCLOSURE A method of zone refining a crystal wafer (116 Fig. 1) comprising the steps of focusing a laser beam to a small spot (120) of selectable size on the surface of the crystal wafer (116) to melt a spot on the crystal wafer, scanning the small laser beam spot back and forth across the surface of the crystal wafer (116) at a constant velocity, and moving the scanning laser beam across a predetermined zone of the surface of the crystal wafer (116) in a direction normal to the laser beam scanning direction and at a selectible velocity to melt and refine the entire crystal wafer (116).

523389

Affiliated with

Also associated with

Rating

Laser furnace and method for zone refining of semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser furnace and method for zone refining of semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser furnace and method for zone refining of semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1300386