Laser including monolithically integrated planar devices and...

H - Electricity – 01 – L

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H01L 27/15 (2006.01) H01S 3/23 (2006.01) H01S 5/026 (2006.01) H01S 5/227 (2006.01) H01S 5/32 (2006.01) H01S 5/02 (2006.01) H01S 5/042 (2006.01) H01S 5/22 (2006.01)

Patent

CA 1279920

LASER INCLUDING MONOLITHICALLY INTEGRATED PLANAR DEVICES AND PROCESSES FOR THEIR PREPARATION Abstract of the Disclosure Monolithically integrated devices are dis- closed in which a laser having a capping layer with a relatively high conductivity imparting ion concentra- tion is laterally offset along a planar surface from a surface layer having a lower conductivity imparting ion concentration. The monolithically integrated laser and sur- face layer are formed by providing laterally offset channels in a planar substrate surface and selec- tively epitaxially growing the required laser layers and the surface layer in separate channels.

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