Laser-induced bandgap shifting for photonic device integration

Details Laser-induced bandgap shifting for photonic device integration Laser-induced bandgap shifting for photonic device integration

H - Electricity

01

S

H01S 5/34 (2006.01) H01S 5/026 (2006.01) H01S 5/20 (2006.01)

Patent

CA 2331567

To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra violet radiation to induce alteration of a near-surface region of said microstructure. Subsequently the microstructure is annealed to induce quantum well intermixing and thereby cause a bandgap shift dependent on said ultra violet radiation.

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