Laser induced flow ge-o based materials

Details Laser induced flow ge-o based materials Laser induced flow ge-o based materials

H - Electricity

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H01L 21/31 (2006.01) H01L 21/268 (2006.01) H01L 21/3105 (2006.01) H01L 21/316 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1201822

-23- LASER INDUCED FLOW Ge-O BASED MATERIALS Michelangelo Delfino William I. Lehrer ABSTRACT In a semiconductor device, laser energy is used to selectively heat various SiO2 and/or GeO2 based materials to elevated temperatures while maintaining the active device region and electrical interconnects at relatively low temperatures, to for example, induce densification and/or flow of the SiO2 and/or GeO2 based material to round off sharp edges and stops, without damaging or affecting the active region and electrical interconnects.

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