Laser induced flow of integrated circuit structure materials

Details Laser induced flow of integrated circuit structure materials Laser induced flow of integrated circuit structure materials

B - Operations, Transporting

23

K

327/1.1, 117/74.

B23K 26/00 (2006.01) H01L 21/268 (2006.01) H01L 21/3105 (2006.01)

Patent

CA 1174285

ABSTRACT OF THE DISCLOSURE A tunable CO2 gas laser is used to selectively heat various glass materials or silicon-oxygen bonded materials to elevated temperatures while maintaining an active device region at relatively low temperatures, to, for example, induce densification and/or flow of the glass materials or silicon-oxygen bonded materials to round off sharp edges and stops.

369491

Affiliated with

Also associated with

Rating

Laser induced flow of integrated circuit structure materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser induced flow of integrated circuit structure materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser induced flow of integrated circuit structure materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1193731