Laser-photodetector assemblage

Details Laser-photodetector assemblage Laser-photodetector assemblage

H - Electricity

01

S

345/32, 345/62

H01S 3/03 (2006.01) H01S 3/102 (2006.01) H01S 5/026 (2006.01) H01S 5/227 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2014937

Abstract of the Disclosure Briefly, in the invention a photodetector and an injection laser are monolithically integrated on the same semiconductor chip. The laser and photodetector are positioned side-by-side and the laser mirrors can be formed bycleaving. In operation, a portion of the electromagnetic energy carried in the evanescent tail of the optical mode is detected by the photodetector for monitoring the average output power of the laser. Current confinement and lateral index guiding can be provided by Fe or Ti doped semi-insulating layers of InP. The side-by-side arrangement enables the photodetector to monitor the output power of the laser without degrading the output power. - 7 -

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