H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 3/10 (2006.01) G03F 7/20 (2006.01) H05G 2/00 (2006.01)
Patent
CA 2229170
A laser plasma x-ray source having an improved x-ray conversion efficiency with a minimized occurrence of debris, and a semiconductor lithography apparatus and method using the same are provided. The x-ray generation unit of the present invention comprises a vacuum chamber which encases the target, a target supply unit which supplies a fine particle mixture gas target into the vacuum chamber, a laser irradiation unit which irradiates a laser beam on the particle mixture gas target, and a target recovery unit to recover unused particle mixture gas target from the vacuum chamber.
Cette invention concerne une source de rayons X à plasma laser caractérisée par une efficacité améliorée d'usinage de semiconducteurs et une réduction des débris, ainsi qu'un appareil de gravure et le procédé correspondants. La source de rayons X objet de l'invention comprend une enceinte sous vide qui reçoit la cible à traiter, un groupe d'alimentation en mélange de particules fines en suspension gazeuse à traiter, un groupe d'irradiation laser qui bombarde le mélange précité et un groupe de récupération du mélange excédentaire subsistant dans l'enceinte sous vide.
Matsui Tetsuya
Nishi Masatsugu
Tooma Masahiro
Ueno Manabu
Yamada Kimio
Hitachi Ltd.
Kirby Eades Gale Baker
LandOfFree
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