Laser process for gettering defects in semiconductor devices

Details Laser process for gettering defects in semiconductor devices Laser process for gettering defects in semiconductor devices

H - Electricity

01

L

356/176

H01L 21/02 (2006.01) H01L 21/268 (2006.01) H01L 21/322 (2006.01) H01L 21/324 (2006.01)

Patent

CA 1195012

ABSTRACT LASER PROCESS FOR GETTERING DEFECTS IN SEMICONDUCTOR DEVICES A process for gettering defects in a semicon- ductor is provided. The process comprises using a laser beam to drive a dopant material into a melted non-active surface of a semiconductor device, followed by heating the semiconductor to drive defects to traps formed by the dopant. The process creates in the bulk of the semiconductor strain fields that not only trap defects, which would otherwise degrade device performance, but also hold the defects during subsequent processing steps.

415583

Affiliated with

Also associated with

Rating

Laser process for gettering defects in semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser process for gettering defects in semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser process for gettering defects in semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1315270