Latching transistor

Details Latching transistor Latching transistor

H - Electricity

01

L

356/161

H01L 29/44 (1980.01)

Patent

CA 1134516

36 SP 1100 ABSTRACT OF THE DISCLOSURE A latching transistor is described having both high current capacity and high turn-off gain. A selectively shorted anode emitter provides a four-layer structure capable of sustaining current only under those portions of cathode emitter fingers adjacent interdigitated gate fingers and particularly not in the center of the cathode emitter fingers. Additionally, a control region is provided for conveniently adjusting the amount of anode emitter shorting for optimizing turn-off speed, forward voltage drop and gate triggering characteristics.

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