Lateral bipolar transistor

Details Lateral bipolar transistor Lateral bipolar transistor

H - Electricity

01

L

H01L 29/73 (2006.01) H01L 21/331 (2006.01) H01L 27/06 (2006.01) H01L 27/082 (2006.01) H01L 29/737 (2006.01)

Patent

CA 2135982

A lateral bipolar transistor is provided in which the active base region comprises a layer of a material providing a predetermined valence band offset relative to the emitter and collector regions, to enhance transport of carriers from the emitter to the collector in a lateral manner. In particular, a silicon hetero-junction lateral bipolar transistor (HLBT) is provided. The lateral bipolar transistor structure and method of fabrication of the transistor is compatible with a bipolar-CMOS integrated circuit. Preferably the base region comprises a silicon- germanium alloy or a silicon-germanium superlattice structure comprising a series of alternating layers of silicon and silicon-germanium alloy.

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