Lateral confinement laser

Details Lateral confinement laser Lateral confinement laser

H - Electricity

01

S

H01S 5/227 (2006.01) H01S 5/223 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2283233

In a semiconductor laser comprising a mesa structure (11), the lateral current distribution in the mesa structure (11) is controlled in order to reduce the current at the mesa walls near the active lasing layer (15) by locating, in the mesa structure, a current blocking layer (13) having an aperture (14) of less width than the mesa structure (11) and being centred in relation to the mesa structure (11).

Dans un laser à semiconducteurs comprenant une structure mésa (11) la distribution du courant latéral dans la structure mésa (11) est contrôlée pour réduire le courant au niveau des parois de la structure mésa à proximité de la couche active (15) du laser, par la mise en place, dans la structure mésa d'une couche (13) bloquant le courant qui comporte une ouverture (14) dont la largeur est inférieure à celle de la structure mésa (11) et dont la position est centrée par rapport à ladite structure mésa (11).

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