H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/32
H01S 5/223 (2006.01) H01L 21/208 (2006.01) H01L 21/306 (2006.01) H01S 5/22 (2006.01) H01L 33/00 (2006.01)
Patent
CA 1093197
LATERAL CURRENT CONFINEMENT IN JUNCTION LASERS Abstract of the Disclosure Described is a stripe geometry double hetero- structure (DH) junction laser in which lateral current confinement is achieved by pairs of laterally spaced, reverse-biased p-n junctions. A mesa is formed on an n-GaAs substrate, for example, and a layer of p-AlGaAs is then grown by LPE so that nucleation does not occur on the top of the mesa. Laterally spaced zones of p-AlGaAs are thus formed on either side of the mesa. An n-p-p or n-n-p DH is then grown so that the interface between the p-AlGaAs layers and the first n-layer of the DH forms a pair of laterally spaced p-n junctions separated by the mesa. When the light- emitting p-n junction in the DH active region is forward biased, the pair of spaced junctions are reverse biased so that pumping current is constrained to flow through the active region in a narrow channel to the mesa. Further lateral current confinement is achieved by forming on the upper DH surface a second pair of reverse biased p-n junctions separated by a window in alignment with the mesa.
301990
Logan Ralph A.
Tsang Won-Tien
Kirby Eades Gale Baker
Western Electric Company Incorporated
LandOfFree
Lateral current confinement in junction light emitting... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lateral current confinement in junction light emitting..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral current confinement in junction light emitting... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-311589